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v00.0903
MICROWAVE CORPORATION
HMC498
GaAs PHEMT MMIC POWER AMPLIFIER, 17 - 24 GHz
Features
+34 dBm Output IP3 Saturated Power: +27 dBm @ 25% PAE Gain: 24 dB Supply Voltage: +5.0 V 50 Ohm Matched Input/Output 2.38 mm x 1.46 mm x 0.1 mm
1
AMPLIFIERS - CHIP
Typical Applications
The HMC498 is ideal for use as a power amplifier for: * Point-to-Point Radios * Point-to-Multi-Point Radios * VSAT * Military & Space
Functional Diagram
General Description
The HMC498 is a high dynamic range GaAs PHEMT MMIC Power Amplifier which operates between 17 and 24 GHz. The HMC498 provides 24 dB of gain, +27 dBm of saturated power and 25% PAE from a +5.0 V supply voltage. The HMC498 amplifier can easily be integrated into Multi-Chip-Modules (MCMs) due to its small size. All data is with the chip in a 50 Ohm test fixture connected via 0.025mm (1 mil) diameter wire bonds of minimal length 0.31mm (12 mils).
Electrical Specifications, TA = +25 C, Vdd = 5V, Idd = 250 mA*
Parameter Frequency Range Gain Gain Variation Over Temperature Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Noise Figure Supply Current (Idd)(Vdd = 5V, Vgg = -0.8V Typ.) 20 20 Min. Typ. 17.0 - 19.0 23 0.03 11 20 23.5 27 34 3.5 250 22 0.04 21 Max. Min. Typ. 19.0 - 22.0 24 0.03 11 18 25 26.5 34 4.0 250 21 0.04 20 Max. Min. Typ. 22.0 - 24.0 23 0.03 8 15 24 25.5 34 4.5 250 0.04 Max. Units GHz dB dB/ C dB dB dBm dBm dBm dB mA
* Adjust Vgg between -2 to 0V to achieve Idd = 250 mA typical. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
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v00.0903
MICROWAVE CORPORATION
HMC498
GaAs PHEMT MMIC POWER AMPLIFIER, 17 - 24 GHz
GaAs MMIC SUB-HARMONICALLY Gain vs. Temperature PUMPED MIXER Broadband Gain & Return Loss
30 25 20 15 RESPONSE (dB) GAIN (dB) 5 0 -5 -10 -15 -20 -25 -30 12 14 16 18 20 22 24 26 28 FREQUENCY (GHz) 14 12 10 16 17 18 19 20
S21 S11 S22
17 - 25 GHz
30 28 26
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AMPLIFIERS - CHIP
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10
24 22 20 18 16
+25 C +85 C -55 C
21
22
23
24
25
FREQUENCY (GHz)
Input Return Loss vs. Temperature
0
+25 C +85 C -55 C
Output Return Loss vs. Temperature
0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30
+25 C +85 C -55 C
-5 RETURN LOSS (dB)
-10
-15
-20
-25 16 17 18 19 20 21 22 23 24 25 FREQUENCY (GHz)
16
17
18
19
20
21
22
23
24
25
FREQUENCY (GHz)
P1dB vs. Temperature
30 28 26 24 P1dB (dBm) 22 20 18 16 14 12 10 16 17 18 19 20 21 22 23 24 25 FREQUENCY (GHz)
+25 C +85 C -55 C
Psat vs. Temperature
30 28 26 24 Psat (dBm) 22 20 18 16 14 12 10 16 17 18 19 20 21 22 23 24 25 FREQUENCY (GHz)
+25 C +85 C -55 C
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
v00.0903
MICROWAVE CORPORATION
HMC498
GaAs PHEMT MMIC POWER AMPLIFIER, 17 - 24 GHz
1
AMPLIFIERS - CHIP
Output IP3 vs. Temperature
40 38 36 34 OIP3 (dBm) 32 30 28 26 24 22 20 16 17 18 19 20 21 22 23 24 25 FREQUENCY (GHz)
+25 C +85 C -55 C
Noise Figure vs. Temperature
10 9 8 NOISE FIGURE (dB) 7 6 5 4 3 2 1 0 16 17 18 19 20 21 22 23 24 25 FREQUENCY (GHz)
+25 C +85 C -55 C
Gain & Power vs. Supply Voltage@ 20 GHz, Idd= 250 mA
30 GAIN (dB), P1dB (dBm), Psat (dBm) 28 26
Reverse Isolation vs. Temperature
0 -10 ISOLATION (dB) -20 -30 -40 -50 -60 -70
+25 C +85 C -55 C
24 22 20 18 16 14 12 10 3 3.5 4 4.5 5 5.5 Vdd Supply Voltage (Vdc)
Gain P1dB Psat
16
17
18
19
20
21
22
23
24
25
FREQUENCY (GHz)
Power Compression @ 20 GHz
30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 -10 Pout (dBm), GAIN (dB), PAE (%)
Power Compression @ 24 GHz
30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 -10 Pout (dBm), GAIN (dB), PAE (%)
Pout (dBm) Gain (dB) PAE (%)
Pout (dBm) Gain (dB) PAE (%)
-8
-6
-4
-2
0
2
4
6
8
10
-8
-6
-4
-2
0
2
4
6
8
10
INPUT POWER (dBm)
INPUT POWER (dBm)
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
v00.0903
MICROWAVE CORPORATION
HMC498
GaAs PHEMT MMIC POWER AMPLIFIER, 17 - 24 GHz
Absolute Maximum Ratings
Drain Bias Voltage (Vdd1, Vdd2, Vdd3) Gate Bias Voltage (Vgg) RF Input Power (RFin)(Vdd = +5.0 Vdc) Channel Temperature Continuous Pdiss (T= 85 C) (derate 29 mW/C above 85 C) Thermal Resistance (channel to die bottom) Storage Temperature Operating Temperature +5.5 Vdc -4.0 to 0 Vdc +20 dBm 175 C 2.65 W
Typical Supply Current vs. Vdd
Vdd (Vdc) +4.5 +5.0 +5.5 +3.0 +3.5 Idd (mA) 241 250 258 240 250 259
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AMPLIFIERS - CHIP
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34 C/W -65 to +150 C -55 to +85 C
+4.0
Note: Amplifier will operate over full voltage ranges shown above. Vgg adjusted to achieve Idd= 250 mA at +5.0V and +3.5V.
Outline Drawing
NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM] 2. DIE THICKNESS IS .004" 3. TYPICAL BOND IS .004" SQUARE 4. BACKSIDE METALLIZATION: GOLD 5. BOND PAD METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND. 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
MICROWAVE CORPORATION
v00.0903
HMC498
GaAs PHEMT MMIC POWER AMPLIFIER, 17 - 24 GHz
1
AMPLIFIERS - CHIP
Pad Descriptions
Pin Number Function Description This pad is AC coupled and matched to 50 Ohms from 17 - 24 GHz. Interface Schematic
1
RF IN
2-4
Vdd1, Vdd2, Vdd3
Power Supply Voltage for the amplifier. External bypass capacitors of 100 pF and 0.01 F are required.
5
RF OUT
This pad is AC coupled and matched to 50 Ohms from 17 - 24 GHz.
6
Vgg
Gate control for amplifier. Adjust to achieve Idd of 250 mA. Please follow "MMIC Amplifier Biasing Procedure" Application Note. External bypass capacitors of 100 pF and 0.01 F are required.
Die Bottom
GND
Die bottom must be connected to RF/DC ground.
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
MICROWAVE CORPORATION
v00.0602
HMC498
GaAs PHEMT MMIC POWER AMPLIFIER, 17 - 24 GHz
Assembly Diagram
1
AMPLIFIERS - CHIP
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
1 - 117
MICROWAVE CORPORATION
v00.0903
HMC498
GaAs PHEMT MMIC POWER AMPLIFIER, 17 - 24 GHz
1
AMPLIFIERS - CHIP
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). Microstrip substrates should brought as close to the die as possible in order to minimize bond wire length. Typical dieto-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils).
1 - 118
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
MICROWAVE CORPORATION
v00.0903
HMC498
GaAs PHEMT MMIC POWER AMPLIFIER, 17 - 24 GHz
Handling Precautions
Follow these precautions to avoid permanent damage.
1
AMPLIFIERS - CHIP
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Cleanliness:
Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems.
Static Sensitivity:
Follow ESD precautions to protect against > 250V ESD strikes.
Transients:
Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up.
General Handling:
Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat.
Eutectic Die Attach:
A 80/20 gold tin preform is recommended with a work surface temperature of 255 deg. C and a tool temperature of 265 deg. C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 deg. C. DO NOT expose the chip to a temperature greater than 320 deg. C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment.
Epoxy Die Attach:
Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer's schedule.
Wire Bonding
Ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 deg. C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31 mm (12 mils).
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com

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